specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 1 of 5 january 2009 cv111 - 1a pcs/dcs-band high linearity downconverter product features ? high dynamic range downconverter with integrated lo, if, & rf amps ? rf: 1710 ? 2000 mhz ? if: 65 ? 250 mhz ? +38 dbm output ip3 ? +21 dbm output p1db ? 5.3 db noise figure ? +5v single supply operation ? pb-free 6mm 28-pin qfn package ? low-side lo configuration ? common footprint with other umts/cellular versions product description the cv111-1a is a high linearity downconverter design ed to meet the demanding issues for performance, functionality, and cost goals of current and next g eneration mobile infrastructure basestations. it provides hig h dynamic range performance in a low profile surface-m ount leadless package that measures 6 x 6 mm square. functionality includes rf amplification, frequency conversion and if amplification, while an integrated lo driver amplifier powers the passive mixer. the mcm is implemented with reliable and mature gaas mesfet and ingap hbt technology. typical applications include frequency down conversion, modulation and demodulation for receivers used in cdma/gsm/tdma, cdma2000, w-cdma, gprs, and edge 2.5g mobile infrastructure technologies for pcs / dcs frequency bands. functional diagram top view specifications (1) parameters units min typ max comments rf frequency range mhz 1710 ? 2000 lo frequency range mhz 1460 ? 1935 if center frequency range mhz 65 ? 250 see note 2 % bandwidth around if center frequency % 7.5 see no te 3 if test frequency mhz 240 ssb conversion gain db 20 temp = 25 c gain drift over temp (-40 to 85 c) db 1.5 reference d to +25 c output ip3 dbm +38 see note 4 output ip2 dbm +48 see note 4 output 1db compression point dbm +21 noise figure db 5.3 see note 5 lo input drive level dbm -2.5 0 +2.5 lo-rf isolation db 45 see note 6 lo-if isolation db 35 p lo = 0 dbm return loss: rf port db 14 return loss: lo port db 14 return loss: if port db 11 operating supply voltage v +4.9 +5 +5.1 supply current ma 290 360 480 fit rating failures / 1e9 hrs 72.1 @ 70 o c ambient, 90% confidence thermal resistance c / w 27 junction temperature c 160 see note 7 1. specifications when using the application speci fic circuit (shown on page 3) with a low side lo = 0 dbm in a downconverting application over the oper ating case temperature range. 2. if matching components affect the center if fre quency. proper component values for other if cente r frequencies can be found in the if amplifier matc hing table or by e-mailing to sjcapps@tqs.com . 3. the if bandwidth of the converter is defined as 15% around any center frequency in its operating i f frequency range. the bandwidth is determined wit h external components. specifications are valid ar ound the total 7.5% bandwidth. ie. with a center frequ ency of 240 mhz, the specifications are valid from 240 18 mhz. 4. assumes the supply voltage = +5 v. oip3 is mea sured with ? f = 1 mhz with if out = 5 dbm / tone. 5. assumes lo injection noise is filtered at the t hermal noise floor, -174 dbm/hz, at the rf, if, and image frequencies. 6. l-r isolation is referenced to an lo injection of 0 dbm. the l-r performance shown also includes the isolation due to an external saw filter between the rf amplifier and mixer. 7. the maximum junction temperature ensures a mini mum mttf rating of 1 million hours of usage. absolute maximum rating parameter rating storage temperature -55 to +125 c dc voltage +6 v max. junction temperature, tj +160 c rf input (continuous) +2 dbm operation of this device above any of these paramet ers may cause permanent damage. ordering information part no. description CV111-1AF pcs/dcs-band high linearity downconverter (lead-free/rohs-compliant 6x6mm qfn package) cv111-1apcb240 fully assembled eval. board, if = 240mhz standard t/r size = 500 pieces on a 7? reel. gnd rf in gnd mixif gnd if in gnd 1 2 3 4 5 6 7 21 20 19 18 17 16 15 28 27 26 25 24 23 22 8 9 10 11 12 13 14 if amp rf amp lo driver amp if out gnd gnd gnd bias gnd lo in rf out gnd gnd gnd gnd gnd mixrf gnd gnd gnd mixlo gnd lo out gnd rf if lo
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 2 of 5 january 2009 cv111 - 1a pcs/dcs-band high linearity downconverter device architecture / application circuit informati on typical downconverter performance chain analysis cumulative performance stage gain (db) output p1db (dbm) output ip3 (dbm) nf (db) current (ma) gain (db) output p1db (dbm) output ip3 (dbm) nf (db) rf amplifier 12 21 41 3.5 140 12 21.0 41.0 3.5 rf filter -2 --- --- 2.0 --- 10 19.0 39.0 3.6 lo amp / mmic mixer -8.5 8 23 9.1 80 1.5 6.1 22.2 4 .8 if amplifier 18.5 23 41 2.1 140 20 20.7 37.9 5.4 cv111-1a cumulative performance 360 20 20.7 37.9 5.4 cv111-1a : the application circuit can be broken up into four main functions as denoted in the colored dotted areas above: rf /if diplexing (purple; this is only used with the cellula r-band cv products), amplifier matching (green), filtering (red) , and dc biasing (blue). there are various placeholders for chip compo nents in the circuit schematic so that a common pcb can be used for all wj single-branch converters. additional placeholders for oth er optional functions such as filtering are also included. rf / if amplifier matching: the rf amplifier requires a shunt matching element for optimal gain and input return loss perf ormance. the if amplifier requires matching elements to optimize th e performance of the amplifier to the desired if center fr equency. since if bandwidths are typically on the order of 5 to 10%, a simple two element matching network, in the form of either a hig h-pass or low-pass filter structure, is sufficient to match the m mic if amplifier over these narrow bandwidths. proper component values for other if center frequencies can be found in the if amplifier matching table or by e-mailing to sjcapps@tqs.com. rf bandpass filtering: bandpass filtering is recommended to achieve the best noise figure performance with the downconvert er. the bandpass filter, implemented with a saw filter on the application circuit, allows for the suppression of noise fro m the image frequency. it is permissible to not use a filter and use a 2 db pad with r6, r7, and r16 instead with slightly degraded nois e figure performance. external diplexer: this is only used with the cellular-band cv products. the mixer performs the diplexing internally for the cv111-1a; therefore the components shown in the diplexer sectio n should be loaded as follows: c2 = c14 = 0 . dc biasing: dc bias must be provided for the rf, lo and if amplifiers in the converter. r1 sets the operating cu rrent for the last stage of the lo amplifier and is chosen to optimize t he mixer lo drive level. proper rf chokes and bypass capacitors ar e chosen for proper amplifier biasing at the intended frequency of o peration. the ?+5 v? dc bias should be supplied directly from a voltage regulator. if amplifier matching frequency (mhz) 40 50 75 100 125 130 155 169 180 210 240 l7 (nh) 470 430 150 150 120 120 100 82 82 82 56 c17 (pf) 24 15 22 10 8.2 6.8 5.6 5.0 4.7 3.3 3.9 r8 (ohms) 4.7 4.7 3.3 2.2 2.2 2.2 2.2 2.2 2.2 2.2 2.2 l4 (nh) 470 240 330 330 330 330 330 330 330 220 220 gnd rf in gnd mixif gnd if in gnd 1 2 3 4 5 6 7 21 20 19 18 17 16 15 28 27 26 25 24 23 22 8 9 10 11 12 13 14 if amp rf amp lo driver amp if out gnd n/c gnd bias gnd lo in rf out gnd n/c gnd n/c gnd mixrf gnd n/c gnd mixlo gnd lo out gnd rf if lo printed circuit board material: .014? fr - 4, 4 layers, .062? total thickness rf amp bias if amp bias lo amp bias lo amp bi as rf bandpass filter / attenuator pad rf amp matching if amp matching rf / if diplexer (used for cellular versions only)
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 3 of 5 january 2009 cv111 - 1a pcs/dcs-band high linearity downconverter downconverting application circuit: cv111-1apcb240 rf = 1800 ? 2000 mhz, if = 240 mhz pcb layout circuit board material: .014? fr-4, 4 layers, .062? total thickness bill of materials ref. desig. component r1 13 chip resistor, size 0805 r2, r3, r4, r5, c2, c14 0 chip resistor r6, r7, r9, r10 470 chip resistor r8 2.2 chip resistor r11, r16 10 chip resistor c1, c3, c4, c5, c6 100 pf chip capacitor c7, c9, c16 0.018 f chip capacitor c8, c10 1000 pf chip capacitor c11 1.5 pf chip capacitor c18, c12, c13, c15, c21, f1, l5, l6, l8, l10 shown in silkscreen, but not used in actual circuit. c17 3.9 pf chip capacitor l2 18 nh chip inductor l3 120 nh chip inductor l4 220 nh chip inductor, size 0805 l7 56 nh chip inductor u1 cv111-1a wj converter all components are of size 0603 unless otherwise sp ecified.
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 4 of 5 january 2009 cv111 - 1a pcs/dcs-band high linearity downconverter cv111-1apcb240 application circuit performance plot s rf = 1800 ? 2000 mhz, if = 240 mhz conversion gain vs. rf frequency if freq = 240mhz 18 19 20 21 22 23 1600 1700 1800 1900 2000 2100 frequency (mhz) conversion gain (db) input ip3 vs. rf frequency if freq = 240mhz 15 16 17 18 19 20 1600 1700 1800 1900 2000 2100 frequency (mhz) input ip3 (db) l-i isolation vs. lo frequency if freq = 240mhz 30 32 34 36 38 40 1360 1460 1560 1660 1760 1860 frequency (mhz) l-i isolation l-r isolation vs. lo frequency if freq = 240mhz 25 28 31 34 37 40 1360 1460 1560 1660 1760 1860 frequency (mhz) l-r isolation
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 5 of 5 january 2009 cv111 - 1a pcs/dcs-band high linearity downconverter mechanical information this package is lead-free/rohs-compliant. the plating ma terial on the pins is annealed matte tin over copper. it is compatible with both lead-free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. outline drawing mounting configuration / land pattern product marking the component will be lasermarked with a ?CV111-1AF? product label with an alphanumeric lot code on the top surface of the package. tape and reel specifications for this part will be located on the website in the ?application notes? section. esd / msl information esd rating: class 1b value: passes 500v to <1000v test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iii value: passes 500v to <1000v test: charged device model (cdm) standard: jedec standard jesd22-c101 msl rating: level 2 at +260 c convection reflow standard: jedec standard j-std-020 functional pin layout pin function pin function 1 rf amp output 15 lo amp input 2 gnd 16 gnd 3 n/c or gnd 17 lo amp bias 4 gnd 18 gnd 5 n/c or gnd 19 n/c or gnd 6 gnd 20 gnd 7 mixer rf input 21 if amp output/bias 8 gnd 22 gnd 9 n/c or gnd 23 if amp input 10 gnd 24 gnd 11 mixer lo input 25 mixer if output 12 gnd 26 gnd 13 lo amp output/bias 27 rf amp input 14 gnd 28 gnd
|
